Persistent photoconductivity silicon. 1103/physrevb. The photogenerated holes exceed the relatively few remaining acceptor-introduced holes at our measurement temperature of 45 K, while the corresponding Oct 18, 2018 · A light-induced increase in the dark conductivity is observed in composite thin films consisting of hydrogenated amorphous silicon (a-Si:H) containing nanocrystalline germanium (nc-Ge) inclusions, synthesized by co-deposition in a dual-chamber plasma enhanced chemical vapor deposition system. It is found that the excitation of PPC follows a power-law dependence on the exposure time, where the power-law exponent β is temperature dependent. We have observed time-varying photoconductivity and persistent photoconductivity in porous silicon, both with time-evolution scales of the order of several minutes or hours. Charge-based deep level transient spectroscopy measurement confirmed that a shallow level with activation energy of 0. . We found conclusive results showing competition between positive photoconductivity and negative persistent photoconductivity effects. These consist of alternate layers of nand p-type a-Si:H and are the amorphous analogs of crystalline GaAs doping superlattices3. 4 eV; a slightly higher activation energy Persistent photoconductivity in two-dimensional Mo1−x Wx Se2–MoSe2 van der Waals heterojunctions - Volume 31 Issue 7 Dec 2, 1985 · Abstract Doping superlattices prepared by depositing successively 105 Å thick layers of n-type, intrinsic, and p-type amorphous hydrogenated silicon, respectively (nipi structures), exhibit persistent photoconductivity (PPC) at room temperature. We prove that PPC is a bulk effect and that its creation is thermally activated with an activation energy of ∼0. Oxygen-rich-Czochralski-grown wafers were compared with oxygen-poor float-zone-grown ones Persistent photoconductivity effect in silicon wafers was observed using specifically designed test structures. Si NWs (length ∼30 μ m, diameter ∼30-400 nm) were prepared by electroless chemical etching. Analysis of the III–V semiconductor material by atomic force microscopy, Kelvin probe force microscopy, photoconductivity, and X-ray photoelectron spectroscopy quantified bulk and surface charge, as well as chemical composition before and after exposure to UV light and cell Observation of the negative and positive persistent photoconductivity phenomena in silicon planar-doped GaAs We have found both a large persistent photoconductivity and a remarkable field-enhanced conductivity (FEC) showing a three-orders-of-magnitude enhancement after application of low electric fields (20 – 100 V? − 1) in nipnip. Persistent changes in conductivity can reach 0. We find that β∝ T / where ∼570 K Sep 1, 1984 · Abstract A large persistent photoconductivity effect is found in single-crystal p-type bulk silicon covered by an n-type surface layer produced by a sulfur diffusion. Jan 1, 2023 · Persistent photoconductivity (PPC) is a known phenomenon in IGZO thin films [5], [6], [7]. Unlike the Staebler-Wronski effect or persistent photoconductivity observed in amorphous Jun 16, 2022 · Persistent photoconductivity effect in silicon wafers was observed using specifically designed test structures. Recombination of carriers is precluded by their spatial separation in the n-p junction. At temperatures below a Dec 2, 1989 · Doping modulated amorphous silicon, consist- ing of alternating layers of n-type and p-type doped hydrogenated amorphous silicon (a-Si:H) exhibit many new effects, such as a room tem- perature photo-induced excess conductivity, also termed persistent photoconductivity (PPC) be- cause of its very long lifetime. After the light The persistent photoconductivity (PPC) of the n-type Ga-polar GaN was used to stimulate PC12 cells noninvasively. 4×10 12 to 8. Quite interestingly room temperature PPC has been observed in these undoped a-Si:H/nc-Si:H superlattice structures. Experimental results under 5 V bias demonstrate persistent photoconductivity through a slow decay of excess photocurrent with relaxation times ∼110 s Scopus WoS Crossref citations: 19 Giant Persistent Photoconductivity in Rough Silicon Nanomembranes Dec 19, 2024 · Due to the wide band gap (>3 eV) of indium gallium zinc oxide (IGZO), an IGZO transistor hardly absorbs visible and near-infrared (NIR) photons. A. In vacuum, LS on porous silicon increases dark current (DC) while in presence of water vapor it decreases DC. It The persistent photoconductivity (PPC) observed between 200 and 400K in npnp doping modulated hydrogenated silicon (a-Si:H) having individual layer thicknesses between 200 and 600A iS compared with… Expand 2 Feb 26, 2012 · A gated sensor architecture now provides direct control over the Fermi-level position in the semiconductor layer, and eliminates persistent photoconductivity by accelerating electron recombination Jul 1, 1986 · The persistent photoconductivity (PPC) has been observed in undoped, phosphorus-doped, and boron-doped hydrogenated amorphous silicon (a -Si: H) films. With excitation from the valence to the conduction band, it is termed intrinsic photoconductivity; with excitation involving levels in the bandgap, it is called extrinsic photoconductivity; semiconductors that show strong photoconductivity (see below Dec 2, 1985 · Doping superlattices prepared by depositing successively 105 Å thick layers of n-type, intrinsic, and p-type amorphous hydrogenated silicon, respectively (nipi structures), exhibit persistent photoconductivity (PPC) at room temperature. The decay behavior fits quite well calculated values introducing a band tail carrier dependent hydrogen diffusion coefficient. The time evolutions depend on the wavelength and the intensity of the illuminating light. When the conductivity activation energy of the p-type layers was kept fixed at 0. The persistent photoconductivity The persistent photoconductivity (PPC) observed between 200 and 400K in npnp doping modulated hydrogenated silicon (a-Si:H) having individual layer thicknesses between 200 and 600A iS compared with… Expand 2 Oct 24, 2023 · In the search for two-dimensional (2D) materials, transition-metal trichalcogenides (TMTCs) have emerged as promising candidates for optoelectronic applications. These new amorphous semiconductor structures exhibit a long-lived (𝜏 ∼ d a y s) excess conductivity after a brief light exposure at room temperature. PPC behavior with the variation of defect density and active dopants concentration is compared with the previous experimental data. However, these devices are often plagued by surface state effects, which lead to increased leakage current, unstable photogate voltage, and persistent photoconductivity (PPC) effects PERSISTENT PHOTOCONDUCTIVITY IN AMORPHOUS SILICON ALLOYS S. Oct 15, 1984 · Abstract We have synthesized amorphous-semiconductor superlattices consisting of alternating layers of 𝑛 -type and 𝑝 -type doped, hydrogenated, amorphous silicon. doping-modulated superlattices of amorphous hydrogenated silicon. Particularly, persistent photoconductivity (PPC), characterized by the sustained presence Persistent photoconductivity is commonly attributed to defects and dislocations in the material. As the annealing temperature is raised for these films the decay of residual conductivity is accelerated and the PPC disappears almost completely after annealing at 500°C. Here, the authors develop Aug 3, 2018 · Large and persistent photoconductivity (LPPC) in semiconductors is due to the trapping of photogenerated minority carriers at crystal defects. The persistent photoconductivity ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Sep 1, 1984 · A large persistent photoconductivity effect is found in single-crystal p-type bulk silicon covered by an n-type surface layer produced by a sulfur diffusion. 01% in wafers with a doping level of 2 1014cm−3. Street Xerox Palo Alto Research Center Palo Alto, CA 94304 The persistent photoconductivity effect in doping modulated amorphous silicon is compared to the light-induced conductivity changes in compensated amorphous silicon. Jul 21, 2024 · Devices with a wide-temperature range persistent photoconductivity (PPC) and low power consumption is a challenge for optical synaptic devices in neuromorphic computing. When exposed to light, the current in p-type Si nanomembranes is enhanced by roughly 3 orders Mar 1, 1988 · Further evidence about the phenomenon of persistent photoconductivity (PPC) in doping modulated amorphous hydrogenated silicon multilayers, has been obtained by Sep 23, 2019 · A new mechanism of electron trapping in oxygen-induced deep levels in organic semiconductors is proposed for the clarification of persistent photoconductivity (PPC) behavior in organic phototransisto May 6, 2024 · The manifestation of giant persistent photoconductivity (GPPC) is demonstrated with a fs (femtosecond) Ti:sapphire laser pulse that has a duration of 40 fs and Doping superlattices prepared by depositing successively 105-A\\r{}-thick layers of n-type, intrinsic, and p-type amorphous hydrogenated silicon (n-i-p-i structures), exhibit persistent photoconductivity at room temperature. ZnS NPs (diameter ∼30 nm) were prepared by co-precipitation method. An applied gate voltage can tune the persistent photocurrent and Jul 28, 2009 · We observe persistent photoconductivity, enhanced detectivity, responsivity, and external quantum efficiency (EQE) in hybrid ZnS nanoparticles (NPs) and vertical silicon nanowire (Si NW) devices. Agarwal, Persistent photoconductivity in doping-modulated multilayers and compensated thin films of hydrogenated amorphous silicon, Phys. Photoresponse of the device with DC bias was characterized with a white light source and a 630nm He-Ne laser. doi: 10. ZrS3 crystals were grown using Jan 1, 1991 · We studied the effect of band tail carriers on the annealing of metastable persistent photoconductivity (PPC). 9 × 10 −20 cm 2 We fabricated a photo-conducting device with InP nanowires bridged between phosphorous-doped hydrogenated amorphous silicon electrodes. When exposed to light, the current in p-type Si nanomembranes is enhanced by roughly 3 orders of magnitude in comparison with that in the dark and Mar 15, 1991 · The magnitude of the persistent-photoconductivity (PPC) effect in doping-modulated hydrogenated amorphous silicon (a -Si:H) has been investigated as a function of exposure time and illumination temperature. 41. 31 to 0. We found both positive and negative persistent photoconductivities (PPPC and NPPC), which were discussed based on the growth parameters. 4 eV; a slightly higher activation Aug 1, 2009 · This paper reports the observation of giant persistent photoconductivity from rough Si nanomembranes. The recovery time constant is in the range 10-30 min at room temperature. Rev. This effect causes the charge carrier density, conductivity, and µ of the thin films to react slowly to excitation, especially the lack of light after prolonged excitation. Here, monolayers of n-type Persistent photoconductivity (PPC) has long been studied in amorphous as well as highly compensated wide-bandgap bulk semiconductors and was attributed to the presence of large spatial uctuations We observe persistent photoconductivity, enhanced detectivity, responsivity, and external quantum efficiency (EQE) in hybrid ZnS nanoparticles (NPs) and vertical silicon nanowire (Si NW) devices. Persistent photoconductivity (PPC) is the excess dark conductivity that remains after the sample has been exposed to white, heat-filtered light and that This paper reports the observation of giant persistent photoconductivity from rough Si nanomembranes. " by Haneman et al. Kakalios and R. Time resolved PPC measurements show some evidence that the positive and negative Feb 23, 2024 · Photonic devices, in comparison to their conventional electronic counterparts, are gaining prominence as essential constituents of an increasing array of devices and applications. Ordinarily, the excited electrons are more mobile than unexcited electrons. Schmidt series ordinal 6 1 reference 3 February 2020 author name string Ping Feng series ordinal 1 1 reference reference URL 3 February 2020 Ingolf Mönch series ordinal 2 1 reference stated in reference URL 3 February 2020 Stefan Harazim Nov 5, 2024 · We fabricated a photo-conducting device with InP nanowires bridged between phosphorous-doped hydrogenated amorphous silicon electrodes. 4 eV; a slightly higher activation Sep 15, 2025 · AlGaN-based heterojunction field-effect phototransistors (PTs) are highly promising for high-sensitivity solar-blind ultraviolet (SBUV) detection due to their low operating voltage and high gain characteristics. By employing a narrow band gap (1. Abstract Doping superlattices prepared by depositing successively 105 Å thick layers of n-type, intrinsic, and p-type amorphous hydrogenated silicon, respectively (nipi structures), exhibit persistent photoconductivity (PPC) at room temperature. Oxygen-rich-Czochralski-grown wafers were compared with oxygen-poor float-zone-grown ones. Experimental results from a large number of devices demonstrate a persistent photoconductivity, a very unique feature of interest This paper reports the observation of giant persistent photoconductivity from rough Si nanomembranes. Lee Keywords: Compensated, Dangling Bond, Doping Modulated, Excess Conductivity, Hydrogenated Amorphous Silicon, Light-Induced, Multilayer, Persistent Photoconductivity, Superlattice Export: RIS, BibTeX Price: Feb 15, 2011 · We report measurements of the conductivity, thermopower, and conductance fluctuations before and after light exposure for a-Si:H samples that show either persistent photoconductivity (PPC) or a Staebler-Wronski effect. The absorption of light is a quantum process in which electrons are excited to higher energy levels. It is proposed that charges accumulate at the surfaces of the photoconductor and around bulk dislocations. 68 eV) of the PVK layer, the PVK/IGZO phototransistor demonstrates excellent light detection in We fabricated a photo-conducting device with InP nanowires bridged between phosphorous-doped hydrogenated amorphous silicon electrodes. Both the conductivity and thermopower are changed by light exposure, but no change is observed in the difference between the conductivity and thermopower activation energies for Mentioning: 1 - We fabricated a photo-conducting device with InP nanowires bridged between phosphorous-doped hydrogenated amorphous silicon electrodes. A thin layer of polystyrene polymer almost Authors: C. When exposed to light, the current in p-type Si nanomembranes is enhanced by roughly 3 orders o Sep 1, 2015 · Dark and photo conductivity along with persistent photoconductivity (PPC) are measured in coplanar geometry using Ag paste as electrodes. This enhanced conductivity, which has been called persistent photoconductivity (PPC), can be as large as 2–3 orders of magnitude more than the dark conductivity in some cases. Theory has suggested that anion vacancies in II-VI semiconductors are responsible for LPPC due to negative- 𝑈 behavior, whereby two minority carriers become kinetically trapped by lattice relaxation Abstract We report on the spectral response and intensity dependence of photoconductivity (PC) and persistent photoconductivity (PPC) in plasma-enhanced chemical vapour deposition grown sulphur-doped n-type a-Si:H films. The recent proposal that the defect structure of doped amorphous silicon is in metastable thermal equilibrium is able to account for the metastable excess conductivity in both systems, and for the several orders of magnitude We created persistent photoconductivity by light illumination on fully compensated amorphous silicon at several temperatures and measured the decay of PPC. Even days can elapse while the sample parameters relax to the dark thermal equilibrium value. The thermal activation barrier against creation of PPC in these materials, the low quantum efficiency Dec 31, 1996 · The slow relaxation of the persistent photoconductivity (PPC) effect in sulfur-doped hydrogenated amorphous silicon (a-Si:H) has been measured as a function of temperature and illumination time. Above this ratio both the PPC and the columnar pattern Nov 26, 2012 · We observe persistent photoconductivity, enhanced detectivity, responsivity, and external quantum efficiency (EQE) in hybrid ZnS nanoparticles (NPs) and vertical silicon nanowire (Si NW) devices. Persistent photoconductivity in n-type GaN (N-polar is unintentionally n-type) is likely a consequence of compensating acceptor states (negatively charged under equilibrium) which serve as hole traps (ET). 8469 Semantic Scholar extracted view of "Persistent photoconductivity and field-enhanced conductivity in amorphous-silicon doping-modulated superlattices. Export citation and abstract BibTeX RIS This paper reports the observation of giant persistent photoconductivity from rough Si nanomembranes. 8×10 13 cm −2, as function of temperature. hydrogenated-amorphous-silicon (a-Si:H) multilayer structures and in compensated a-Si:H films have been studied. The data indicate the presence of at least two competing mechanisms, one is tentatively related to photoinduced creation of Doping superlattices prepared by depositing successively 105-A&#778-thick layers of n-type, intrinsic, and p-type amorphous hydrogenated silicon (n-i-p-i structures), exhibit persistent photoconductivity at room temperature. Guha Energy Conversion Devices, Inc. From the intensity dependence of PC it is found that the addition of sulphur changes the recombination mechanism from monomolecular for intrinsic and low-doped films to Photoconductivity is an optical and electrical phenomenon in which a material becomes more electrically conductive due to the absorption of electromagnetic radiation such as visible light, ultraviolet light, infrared light, or gamma radiation. 21 eV and capture cross section of 9. The decay behavior fits quite well calculated values introducing a band tail carrier dependent hydrogen diffusion Apr 25, 1994 · Photo‐Hall free electron concentrations were measured on molecular beam epitaxy grown silicon planar‐doped GaAs samples, with silicon nominal concentration ranging from 1. Here, we show a very long-lasting persistent photoconductivity (PPC) over several hours in thin films of the TMTC zirconium trisulfide (ZrS3) at room temperature when illuminated with a 470 nm LED. 53 eV and the activation energy of the n-type layers was varied from 0. , Manić, D. Persistent photoconductivity effect in silicon wafers was observed using specifically designed test structures. I A brief (a few seconds The persistent photoconductivity (PPC) has been observed in undoped, phosphorus-doped, and boron-doped hydrogenated amorphous silicon (a-Si: H) films. Persistent photoconductivity (PPC) is the excess dark conductivity that remains after the sample has been exposed to white, heat-filtered light and that decays on a time Jul 1, 1986 · The persistent photoconductivity (PPC) has been observed in undoped, phosphorus-doped, and boron-doped hydrogenated amorphous silicon (a -Si: H) films. Supporting: 1, Mentioning: 3 - Persistent photoconductivity as a tool for monitoring oxide cluster concentration in silicon wafers - Haddab, Y. Single-carrier injection was performed with use of Schottky-barrier structures. It is therefore essential to have a simple means to monitor the purity of this zone. [1] When light is absorbed by a material such as a semiconductor, the number of free electrons and holes increases, resulting in increased electrical Dec 2, 1989 · The persistent photoconductivity (PPC) effect in doping modulated amorphous silicon multilayers can result from the thermal equilibration of the defect structure in the doped a-Si:H layers. The magnitude, exposure and doping dependence of the PPC effect can be accounted for using the thermal equilibrium model. Interestingly, LS gives a higher DC in vacuum as well as in presence of water vapor for boron doped hydrogenated amorphous silicon a-Si:H(B) samples. Feb 12, 2025 · Long avoided due to adverse effects in traditional optoelectronic devices, persistent photoconductivity (PPC) is now sought-after for emerging technologies, including artificial synapses and coupled solar batteries. The photogenerated holes exceed the relatively few remaining acceptor-introduced holes at our measurement temperature of 45 K, while the Jan 1, 1987 · The effect of argon dilution of silane on the persistent photoconductivity (PPC) has been studied for single‐layered hydrogenated amorphous silicon films prepared by a glow‐discharge decomposition. These consist of alternate layers of nand p-type a-Si:H and are the amorphous Apr 1, 1998 · Abstract Many semiconductor devices rely on the so-called “denuded zone” of the silicon wafers. Persistent photoconductivity (PPC) is the excess dark conductivity that remains after the sample has been exposed to white, heat-filtered light and that decays on a Nov 1, 1998 · Persistent photoconductivity effect in silicon wafers was observed using specifically designed test structures. We have successfully developed a high-performance phototransistor based on the perovskite (PVK) and IGZO heterojunction. When exposed to light, the current in p-type Si nanomembranes is enhanced by roughly 3 orders of magnitude in comparison with that in the dark and can persist for days at a high conductive state aft … Jan 11, 2021 · Persistent photoconductivity (PPC) has long been studied in amorphous as well as highly compensated wide-bandgap bulk semiconductors and was attributed to the presence of large spatial We would like to show you a description here but the site won’t allow us. PPC in amorphous metal-oxide Dec 1, 1994 · Photo-Hall free electron concentrations were measured on MBE-grown silicon planar-doped GaAs samples, for silicon nominal concentration in the range of (1. Feb 26, 2011 · The persistent photoconductivity (PPC) observed between 200 and 400K in npnp doping modulated hydrogenated silicon (a-Si:H) having individual layer thicknesses between 200 and 600Å iS compared with similar effects in compensated a-Si:H and in amorphous silicon/silicon nitride multilayers. This is primarily attributed to their adjustable electronic characteristics, multifunctionality, and lower energy consumption. Jan 15, 1996 · We have observed time‐varying photoconductivity and persistent photoconductivity in porous silicon, both with time‐evolution scales of the order of several minutes or hours. These experimental results rule out the mechanism requiring the We have observed time-varying photoconductivity and persistent photoconductivity in porous silicon, both with time-evolution scales of the order of several minutes or hours. Agarwal* and S. Nov 1, 2011 · Performances of long persistent photoconductivity, high responsivity and high photoconductive gain were observed in a metal–semiconductor–metal ultraviolet photo-detector fabricated on a microcrystalline diamond film. This indicates that this effect is most probably related to oxygen in silicon. These space charge regions then modulate the effective conduction cross section of the photoconductor. When exposed to light, the current in p-type Si nanomembranes is enhanced by roughly 3 orders of magnitude in comparison with that in the dark and can persist for days at a high conductive state after the light is switched off. 1675 West Maple Road Troy, Michigan 48084 Fritzsche and his co-workers recently reportedl ,2 the first synthesis and experimental results of doping modulated hydrogenated amorphous silicon (a-Si:H). Hybrid device shows ∼10, 3, and Abstract We studied the effect of band tail carriers on the annealing of metastable persistent photoconductivity (PPC). The effects of doping concentration and annealing on the persistent photoconductivity (PPC) in doping-modulated npnp. Jul 28, 2009 · This paper reports the observation of giant persistent photoconductivity from rough Si nanomembranes. It will be shown that persistent photoconductivity (PPC) can be related to the oxygen concentration in the wafer, and thus can be used to evaluate the quality of the denuded zone. The recent proposal that the defect structure of doped amorphous silicon is in metastable thermal equilibrium is able to account for the metastable Abstract Doping superlattices prepared by depositing successively 105-AÌ-thick layers of n-type, intrinsic, and p-type amorphous hydrogenated silicon (n-i-p-i structures), exhibit persistent photoconductivity at room temperature. Photoconductivity is commonly May 15, 1990 · Persistent photoconductivity (PPC) in compensated amorphous silicon (a-Si:H) has been investigated. They found an enhanced dark conductivity parallel to the a-Si:H doping multilayers, after a brief exposure to Persistent photoconductivity effect in silicon wafers was observed using specifically designed test structures. We created persistent photoconductivity by light illumination on fully compensated amorphous silicon at several temperatures and measured the decay of PPC. Persistent photoconductivity (PPC) is the excess dark conductivity that remains after the sample has been exposed to white, heat-filtered light and that decays on a Feb 1, 2011 · The effect of ambient conditions on light soaking (LS) in porous silicon (PS) is studied. 1990 May 15;41 (15):10787-10791. , Popović May 15, 1990 · Persistent photoconductivity (PPC) in compensated amorphous silicon (a-Si:H) has been investigated. The recent proposal that the defect structure of doped amorphous silicon is in metastable thermal equilibrium is able to account for the metastable . A close correlation between the magnitude of the PPC and the defect density Mentioning: 2 - Persistent photoconductivity effect in silicon wafers was observed using specifically designed test structures. After the light Fritzsche and his co-workers recently reportedl ,2 the first synthesis and experimental results of doping modulated hydrogenated amorphous silicon (a-Si:H). Abstract Doping superlattices prepared by depositing successively 105-A ̊ -thick layers of n -type, intrinsic, and p -type amorphous hydrogenated silicon (n- i - p - i structures), exhibit persistent photoconductivity at room temperature. 01% in wafers with a doping level of 2 × 10 14 cm −3 . Experimental results from a large number of devices demonstrate a persistent photoconductivity, a very unique feature of interest. Nov 1, 1998 · The persistent photoconductivity is much higher in the Czochralski wafers. 01% in wafers with a doping level of . Nov 26, 2012 · We observe persistent photoconductivity, enhanced detectivity, responsivity, and external quantum efficiency (EQE) in hybrid ZnS nanoparticles (NPs) and vertical silicon nanowire (Si NW) devices. [31] Illumination results in a steady state excess carrier concentrations of electrons and holes. 10787. A close correlation between the magnitude of the PPC and the defect density photoconductivity 1 reference author Yongfeng Mei series ordinal 5 1 reference 3 February 2020 Oliver G. The magnitude of the PPC effect and the columnar‐growth morphology increase when the argon‐to‐silane mixing ratio increases to 10. Only hole injection can give rise to the PPC in compensated a-Si:H, with the result that the PPC is not a recombination-enhanced effect. After the light The persistent photoconductivity effect in doping modulated amorphous silicon is compared to the light-induced conductivity changes in compensated amorphous silicon. C. J. 4 to 88)×10 12 cm -2. The persistent photoconductivity The persistent photoconductivity effect in Si-dopedn-AlxGa1−xAs layers grown by molecular beam epitaxy on (100)GaAs substrates has been investigated by detailed Halleffect and capacitance… Expand 34 Apr 1, 2016 · Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers of two-dimensional layered semiconductors, especially the transition metal dichalcogenides (TMDs), show novel optoelectronic functionalities due to the sensitivity of their electronic and optical properties to strong quantum confinement and interfacial interactions. To the best of our knowledge, such an effect has never been observed before in silicon crystals. A test structure was designed Aug 1, 2008 · Room temperature photoelectrical characterization with 325-nm ultraviolet and 633-nm visible laser excitations is performed on lateral p-type InP nanowires bridged between vertically oriented heavily p-doped single crystal silicon electrodes. Hybrid device shows ∼10, 3, and May 15, 1990 · Persistent photoconductivity in compensated amorphous siliconPhys Rev B Condens Matter. The results show that PPC cannot be induced by the defect generation only, but the deactivation of 0 105-A-thick layers of n-type, intrinsic, hydrogenated silicon ( n-i-p- i structures), exhibit persistent photoconductivity Persistent photoconductivity (PPC) is the excess dark conductivity that sample has been exposed to white, heat-filtered Aug 1, 2023 · Abstract and Figures Persistent photoconductivity deeply affects the performance of the photodetector, and has been studied in a variety of semiconductor optoelectronic devices. Jun 1, 1997 · The possible origins of persistent photoconductivity (PPC) in compensated hydrogenated amorphous silicon (a -Si : H) are reexamined by the numerical calculation. Jul 28, 2009 · This paper reports the observation of giant persistent photoconductivity from rough Si nanomembranes. Photoconductivity Photoconductivity is the increase in electrical conductivity of a material that takes place when the material is illuminated with infrared, visible, or ultraviolet light. B, № 32, с. Feb 3, 2023 · Photoconductivity denotes the increase of the electric conductivity due to an increased carrier density as a result of an optical excitation. pz0fd cu glno 4w b3sk j9q acna7od sfuqn lymzcw jaz